MRF517
RF TRANS NPN 20V 4GHZ TO39Manufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation MRF517 is an NPN bipolar RF transistor featuring a 20V collector-emitter breakdown voltage and a maximum collector current of 150mA. This device offers a transition frequency of 4GHz and provides a gain of 9dB to 10dB. With a maximum power dissipation of 2.5W, the MRF517 is housed in a TO-39-3 Metal Can (TO-205AD) package for through-hole mounting. The DC current gain (hFE) is a minimum of 50 at 60mA and 10V. This component is suitable for applications in telecommunications and radar systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | - |
| Gain | 9dB ~ 10dB |
| Power - Max | 2.5W |
| Current - Collector (Ic) (Max) | 150mA |
| Voltage - Collector Emitter Breakdown (Max) | 20V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 60mA, 10V |
| Frequency - Transition | 4GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | TO-39 |
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