MRF4427G
RF TRANS NPN 20V 8SOManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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The Microsemi Corporation MRF4427G is an NPN bipolar RF transistor designed for high-frequency applications. This component offers a 20V collector-emitter breakdown voltage and a maximum collector current of 400mA, with a power dissipation capability of 1.5W. It features a minimum DC current gain (hFE) of 10 at 10mA and 5V, and provides a typical gain of 20dB. The MRF4427G is available in a surface-mount 8-SOIC package, suitable for automated assembly processes. This device is commonly utilized in wireless infrastructure, military, and aerospace systems requiring robust RF performance.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | - |
| Gain | 20dB |
| Power - Max | 1.5W |
| Current - Collector (Ic) (Max) | 400mA |
| Voltage - Collector Emitter Breakdown (Max) | 20V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 10mA, 5V |
| Frequency - Transition | - |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 8-SOIC |
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