MPA201
RF TRANS NPN 22V 2GHZ 55AUManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation MPA201 is an NPN bipolar RF transistor designed for high-frequency applications. This component operates with a collector-emitter breakdown voltage of 22V and a maximum collector current of 300mA. It achieves a transition frequency of 2GHz and delivers a gain of 13dB. The MPA201 is rated for 6W of power dissipation and features a chassis mount design for robust thermal management. It is supplied in the 55AU package and is suitable for demanding environments operating up to 200°C. Key specifications include a minimum DC current gain (hFE) of 20 at 100mA and 5V. This device is commonly utilized in RF power amplification stages for wireless communication systems and other high-frequency electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 55AU |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 13dB |
| Power - Max | 6W |
| Current - Collector (Ic) (Max) | 300mA |
| Voltage - Collector Emitter Breakdown (Max) | 22V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 100mA, 5V |
| Frequency - Transition | 2GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 55AU |