MDS800
RF TRANS NPN 65V 1.09GHZ 55ST-1Manufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation MDS800, an NPN bipolar RF transistor, offers robust performance for high-power RF applications. This component features a 65V collector-emitter breakdown voltage and a transition frequency of 1.09GHz. With a maximum collector current of 60A and a maximum power dissipation of 1458W, the MDS800 is engineered for demanding environments. It provides a typical gain of 8.6dB and a minimum DC current gain (hFE) of 20 at 1A, 5V. Designed for chassis mounting utilizing the 55ST-1 package, this device operates at junction temperatures up to 200°C. Applications include high-power RF amplification in industrial and defense systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 55ST-1 |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 8.6dB |
| Power - Max | 1458W |
| Current - Collector (Ic) (Max) | 60A |
| Voltage - Collector Emitter Breakdown (Max) | 65V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 1A, 5V |
| Frequency - Transition | 1.09GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 55ST-1 |
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