MDS70
RF TRANS NPN 65V 1.09GHZ 55CXManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation NPN RF Transistor, part number MDS70. This 225W power transistor operates across a frequency range of 1.03GHz to 1.09GHz, with a collector-emitter breakdown voltage of 65V and a maximum collector current of 5A. Featuring a minimum DC current gain (hFE) of 20 at 500mA and 5V, and a typical gain of 10.3dB to 11.65dB, the MDS70 is designed for demanding RF power applications. Its chassis mount configuration and high operating temperature capability of 200°C (TJ) make it suitable for use in industrial, defense, and telecommunications sectors. The component is supplied in Bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 55CX |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 10.3dB ~ 11.65dB |
| Power - Max | 225W |
| Current - Collector (Ic) (Max) | 5A |
| Voltage - Collector Emitter Breakdown (Max) | 65V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 500mA, 5V |
| Frequency - Transition | 1.03GHz ~ 1.09GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 55CX |
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