MDS60L
RF TRANS NPN 65V 1.09GHZ 55AWManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation MDS60L is an NPN bipolar RF transistor designed for high-power applications. This chassis-mount component operates within a frequency range of 1.03GHz to 1.09GHz, delivering a typical gain of 10dB. The MDS60L supports a collector current of up to 4A and a collector-emitter breakdown voltage of 65V, with a maximum power dissipation of 120W. Key electrical characteristics include a minimum DC current gain (hFE) of 20 at 500mA and 5V. The device is rated for operation up to a junction temperature of 200°C and is supplied in Bulk packaging. This component is suitable for use in demanding RF power amplification stages across various industrial and telecommunications applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 55AW |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 10dB |
| Power - Max | 120W |
| Current - Collector (Ic) (Max) | 4A |
| Voltage - Collector Emitter Breakdown (Max) | 65V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 500mA, 5V |
| Frequency - Transition | 1.03GHz ~ 1.09GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 55AW |
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