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MDS400

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MDS400

RF TRANS NPN 55V 1.09GHZ 55KT

Manufacturer: Microsemi Corporation

Categories: Bipolar RF Transistors

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Microsemi Corporation MDS400 is an NPN bipolar RF power transistor designed for high-power applications. This chassis-mount device operates within the 1.03GHz to 1.09GHz frequency range, offering a nominal gain of 6.5dB. The MDS400 features a maximum collector current of 40A and a collector-emitter breakdown voltage of 55V. It is rated for a maximum power output of 1450W. The minimum DC current gain (hFE) is 10 at 1A and 5V. This component is utilized in demanding sectors such as aerospace, defense, and industrial RF power amplification. The 55KT package facilitates efficient thermal management.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case55KT
Mounting TypeChassis Mount
Transistor TypeNPN
Operating Temperature200°C (TJ)
Gain6.5dB
Power - Max1450W
Current - Collector (Ic) (Max)40A
Voltage - Collector Emitter Breakdown (Max)55V
DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 1A, 5V
Frequency - Transition1.03GHz ~ 1.09GHz
Noise Figure (dB Typ @ f)-
Supplier Device Package55KT

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