MDS150
RF TRANS NPN 60V 1.09GHZ 55AWManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation MDS150 is an NPN bipolar RF transistor designed for high-power applications. This chassis-mount component offers a 60V collector-emitter breakdown voltage and a maximum collector current of 4A. Its operating frequency range spans from 1.03GHz to 1.09GHz, with a guaranteed gain of 10dB. The transistor is rated for a maximum power output of 350W, making it suitable for demanding RF power amplification in industrial, defense, and telecommunications sectors. The MDS150 is supplied in Bulk packaging, featuring the 55AW package for efficient thermal management. Key electrical parameters include a minimum DC current gain (hFE) of 20 at 500mA and 5V. The device is engineered for robust performance at elevated junction temperatures up to 200°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 55AW |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 10dB |
| Power - Max | 350W |
| Current - Collector (Ic) (Max) | 4A |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 500mA, 5V |
| Frequency - Transition | 1.03GHz ~ 1.09GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 55AW |
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