MDS140L
RF TRANS NPN 70V 1.09GHZ 55AWManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation's MDS140L is a high-power NPN bipolar RF transistor designed for demanding applications. Featuring a collector-emitter breakdown voltage of 70V and a maximum collector current of 12A, this device operates efficiently across a frequency range of 1.03GHz to 1.09GHz, delivering a typical gain of 9.5dB. Its robust construction, with a 500W power dissipation capability and chassis mount packaging (55AW), ensures reliable performance in harsh environments. The MDS140L is suitable for use in power amplification stages within industrial, defense, and aerospace communication systems requiring high reliability and performance at RF frequencies. The guaranteed minimum DC current gain (hFE) is 20 at 1A and 5V.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 55AW |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 9.5dB |
| Power - Max | 500W |
| Current - Collector (Ic) (Max) | 12A |
| Voltage - Collector Emitter Breakdown (Max) | 70V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 1A, 5V |
| Frequency - Transition | 1.03GHz ~ 1.09GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 55AW |
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