MDS1100
RF TRANS NPN 65V 1.03GHZ 55TU-1Manufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation MDS1100 is an NPN bipolar RF transistor designed for high-power applications. This surface mount component, housed in a 55TU-1 package, features a collector-emitter breakdown voltage of 65V and a maximum collector current of 100A. With a transition frequency of 1.03GHz and a typical gain of 8.9dB, it is suitable for demanding RF power amplification circuits. The device operates at high temperatures, with a junction temperature rating of 200°C. The MDS1100 is utilized in industries requiring robust RF performance, including industrial, defense, and telecommunications sectors. Its high power handling capability of 8750W makes it a key component in power amplifier modules and other high-frequency power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 55TU-1 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 8.9dB |
| Power - Max | 8750W |
| Current - Collector (Ic) (Max) | 100A |
| Voltage - Collector Emitter Breakdown (Max) | 65V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 5A, 5V |
| Frequency - Transition | 1.03GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 55TU-1 |
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