JTDB75
RF TRANS NPN 55V 1.215GHZ 55AWManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation JTDB75 is an NPN bipolar RF transistor designed for high-power applications. This chassis mount component operates across a frequency range of 960MHz to 1.215GHz, delivering a typical gain of 7dB to 8.2dB. It supports a maximum collector current of 8A and a collector-emitter breakdown voltage of 55V. The device is rated for a maximum power output of 220W and features a minimum DC current gain (hFE) of 20 at 1A and 5V. The operating junction temperature can reach up to 200°C. This transistor is suitable for use in demanding RF power amplification circuits within the telecommunications and industrial sectors. The JTDB75 is supplied in Bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 55AW |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 7dB ~ 8.2dB |
| Power - Max | 220W |
| Current - Collector (Ic) (Max) | 8A |
| Voltage - Collector Emitter Breakdown (Max) | 55V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 1A, 5V |
| Frequency - Transition | 960MHz ~ 1.215GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 55AW |
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