JTDB25
RF TRANS NPN 55V 1.215GHZ 55AW-1Manufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation JTDB25 is an NPN RF Power Transistor designed for high-frequency applications. This component operates within a frequency range of 960MHz to 1.215GHz, offering a typical gain of 7.5dB. Engineered for robust performance, it supports a collector current of up to 5A and a collector-emitter breakdown voltage of 55V. The JTDB25 is rated for a maximum power dissipation of 97W and features a high operating junction temperature of 200°C. Its NPN bipolar RF transistor construction is housed in a 55AW-1 chassis mount package, facilitating efficient thermal management in demanding environments. This device is commonly utilized in industrial, defense, and aerospace applications requiring reliable high-power RF amplification.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 55AW-1 |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 7.5dB |
| Power - Max | 97W |
| Current - Collector (Ic) (Max) | 5A |
| Voltage - Collector Emitter Breakdown (Max) | 55V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 500mA, 5V |
| Frequency - Transition | 960MHz ~ 1.215GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 55AW-1 |
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