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JANTXV2N4957UB

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JANTXV2N4957UB

RF TRANS PNP 30V 30MA UB

Manufacturer: Microsemi Corporation

Categories: Bipolar RF Transistors

Quality Control: Learn More

Microsemi Corporation JANTXV2N4957UB is a PNP bipolar RF transistor designed for high-reliability applications. This component features a 30V collector-emitter breakdown voltage and a maximum collector current of 30mA. With a power dissipation of 200mW and a minimum DC current gain (hFE) of 30 at 5mA and 10V, the JANTXV2N4957UB offers a typical gain of 25dB and a noise figure of 3.5dB at 450MHz. Its operating temperature range is -65°C to 200°C (TJ). The device is housed in a UB package, a 3-SMD, No Lead surface mount configuration, suitable for demanding environments. This transistor is commonly utilized in aerospace, defense, and high-frequency communication systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case3-SMD, No Lead
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature-65°C ~ 200°C (TJ)
Gain25dB
Power - Max200mW
Current - Collector (Ic) (Max)30mA
Voltage - Collector Emitter Breakdown (Max)30V
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 5mA, 10V
Frequency - Transition-
Noise Figure (dB Typ @ f)3.5dB @ 450MHz
Supplier Device PackageUB

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