JANTXV2N4957UB
RF TRANS PNP 30V 30MA UBManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation JANTXV2N4957UB is a PNP bipolar RF transistor designed for high-reliability applications. This component features a 30V collector-emitter breakdown voltage and a maximum collector current of 30mA. With a power dissipation of 200mW and a minimum DC current gain (hFE) of 30 at 5mA and 10V, the JANTXV2N4957UB offers a typical gain of 25dB and a noise figure of 3.5dB at 450MHz. Its operating temperature range is -65°C to 200°C (TJ). The device is housed in a UB package, a 3-SMD, No Lead surface mount configuration, suitable for demanding environments. This transistor is commonly utilized in aerospace, defense, and high-frequency communication systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Gain | 25dB |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 30mA |
| Voltage - Collector Emitter Breakdown (Max) | 30V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 10V |
| Frequency - Transition | - |
| Noise Figure (dB Typ @ f) | 3.5dB @ 450MHz |
| Supplier Device Package | UB |