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JANTXV2N2857UB

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JANTXV2N2857UB

RF TRANS NPN 15V 0.04A UB

Manufacturer: Microsemi Corporation

Categories: Bipolar RF Transistors

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Microsemi Corporation JANTXV2N2857UB is an NPN bipolar RF transistor designed for demanding applications. This surface-mount component offers a collector-emitter breakdown voltage of 15V and a maximum collector current of 40mA. It features a power dissipation of 200mW and a typical gain of 21dB. The noise figure is specified at 4.5dB at 450MHz. With a wide operating temperature range from -65°C to 200°C, this transistor is suitable for environments requiring robust performance. The JANTXV2N2857UB is supplied in a 3-SMD, No Lead UB package and is available in bulk packaging. This component finds application in aerospace and defense systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case3-SMD, No Lead
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Gain21dB
Power - Max200mW
Current - Collector (Ic) (Max)40mA
Voltage - Collector Emitter Breakdown (Max)15V
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 3mA, 1V
Frequency - Transition-
Noise Figure (dB Typ @ f)4.5dB @ 450MHz
Supplier Device PackageUB

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