JANTXV2N2857UB
RF TRANS NPN 15V 0.04A UBManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation JANTXV2N2857UB is an NPN bipolar RF transistor designed for demanding applications. This surface-mount component offers a collector-emitter breakdown voltage of 15V and a maximum collector current of 40mA. It features a power dissipation of 200mW and a typical gain of 21dB. The noise figure is specified at 4.5dB at 450MHz. With a wide operating temperature range from -65°C to 200°C, this transistor is suitable for environments requiring robust performance. The JANTXV2N2857UB is supplied in a 3-SMD, No Lead UB package and is available in bulk packaging. This component finds application in aerospace and defense systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Gain | 21dB |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 40mA |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 3mA, 1V |
| Frequency - Transition | - |
| Noise Figure (dB Typ @ f) | 4.5dB @ 450MHz |
| Supplier Device Package | UB |