JAN2N4957
RF TRANS PNP 30V 30MA TO72Manufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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NPN RF Transistor, Microsemi Corporation, JAN2N4957, designed for robust RF applications. This PNP bipolar transistor offers a 30V collector-emitter breakdown voltage and a maximum collector current of 30mA. It features a minimum DC current gain (hFE) of 30 at 5mA, 10V, and delivers a typical gain of 25dB. With a noise figure of 3.5dB at 450MHz and a maximum power dissipation of 200mW, the JAN2N4957 is suitable for demanding RF amplification stages. The device operates across a wide temperature range of -65°C to 200°C (TJ) and is housed in a TO-72-3 metal can package for through-hole mounting. This component finds application in aerospace, defense, and high-frequency communication systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-72-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Gain | 25dB |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 30mA |
| Voltage - Collector Emitter Breakdown (Max) | 30V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 10V |
| Frequency - Transition | - |
| Noise Figure (dB Typ @ f) | 3.5dB @ 450MHz |
| Supplier Device Package | TO-72 |