JAN2N2857UB
RF TRANS NPN 15V 0.04A UBManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation's JAN2N2857UB is a high-performance NPN bipolar RF transistor designed for demanding applications. This component offers a collector current of up to 40mA and a collector-emitter breakdown voltage of 15V. With a maximum power dissipation of 200mW and a typical gain of 21dB, it is well-suited for RF amplification stages. The JAN2N2857UB features a low noise figure of 4.5dB at 450MHz. Its operating temperature range spans from -65°C to 200°C (TJ). The transistor is presented in a 3-SMD, No Lead package, specifically the UB supplier device package, for efficient surface mounting. This component finds application in various aerospace and defense systems where reliability and performance are paramount.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Gain | 21dB |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 40mA |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 3mA, 1V |
| Frequency - Transition | - |
| Noise Figure (dB Typ @ f) | 4.5dB @ 450MHz |
| Supplier Device Package | UB |
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