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JAN2N2857UB

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JAN2N2857UB

RF TRANS NPN 15V 0.04A UB

Manufacturer: Microsemi Corporation

Categories: Bipolar RF Transistors

Quality Control: Learn More

Microsemi Corporation's JAN2N2857UB is a high-performance NPN bipolar RF transistor designed for demanding applications. This component offers a collector current of up to 40mA and a collector-emitter breakdown voltage of 15V. With a maximum power dissipation of 200mW and a typical gain of 21dB, it is well-suited for RF amplification stages. The JAN2N2857UB features a low noise figure of 4.5dB at 450MHz. Its operating temperature range spans from -65°C to 200°C (TJ). The transistor is presented in a 3-SMD, No Lead package, specifically the UB supplier device package, for efficient surface mounting. This component finds application in various aerospace and defense systems where reliability and performance are paramount.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case3-SMD, No Lead
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Gain21dB
Power - Max200mW
Current - Collector (Ic) (Max)40mA
Voltage - Collector Emitter Breakdown (Max)15V
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 3mA, 1V
Frequency - Transition-
Noise Figure (dB Typ @ f)4.5dB @ 450MHz
Supplier Device PackageUB

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