ITC1100
RF TRANS NPN 65V 1.03GHZ 55SWManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation ITC1100 is an NPN bipolar RF power transistor designed for high-power applications. This chassis mount device operates at a frequency transition of 1.03GHz and features a collector current capability of 80A. With a collector-emitter breakdown voltage of 65V, the ITC1100 delivers a maximum power output of 3400W. The DC current gain (hFE) is a minimum of 10 at 5A and 5V. The transistor exhibits a typical gain of 10dB to 10.5dB and is rated for an operating junction temperature of 200°C. The component is supplied in a 55SW package. This robust RF transistor is commonly utilized in industrial, military, and communications infrastructure applications requiring significant power amplification at RF frequencies.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 55SW |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 10dB ~ 10.5dB |
| Power - Max | 3400W |
| Current - Collector (Ic) (Max) | 80A |
| Voltage - Collector Emitter Breakdown (Max) | 65V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 5A, 5V |
| Frequency - Transition | 1.03GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 55SW |
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