DME800
RF TRANS NPN 65V 1.15GHZ 55ST-1Manufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation's DME800 is a high-power NPN bipolar RF transistor engineered for demanding applications. This chassis mount device operates within a frequency range of 1.025GHz to 1.15GHz, delivering a power output of up to 2500W. Key specifications include a collector current (Ic) of 50A and a collector-emitter breakdown voltage (Vce) of 65V. The DME800 offers a typical gain of 9dB to 10dB and a minimum DC current gain (hFE) of 20 at 600mA and 5V. Designed for robust performance, it features an operating junction temperature of 200°C. The DME800 is commonly utilized in industrial, defense, and high-power RF amplification systems. It is supplied in the 55ST-1 package for efficient thermal management.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 55ST-1 |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 9dB ~ 10dB |
| Power - Max | 2500W |
| Current - Collector (Ic) (Max) | 50A |
| Voltage - Collector Emitter Breakdown (Max) | 65V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 600mA, 5V |
| Frequency - Transition | 1.025GHz ~ 1.15GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 55ST-1 |
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