DME375A
RF TRANS NPN 55V 1.15GHZ 55AWManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation DME375A is a high-power NPN RF transistor designed for demanding applications. This chassis mount device operates within a frequency range of 1.025GHz to 1.15GHz, offering a typical gain of 6.5dB. It is rated for a maximum collector current of 30A and boasts a collector-emitter breakdown voltage of 55V. The DME375A is engineered for robust performance, with a maximum operating junction temperature of 200°C. Its substantial power handling capability of 375W makes it suitable for use in industrial, defense, and telecommunications sectors requiring reliable RF power amplification. The component is supplied in Bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 55AW |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 6.5dB |
| Power - Max | 375W |
| Current - Collector (Ic) (Max) | 30A |
| Voltage - Collector Emitter Breakdown (Max) | 55V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 300mA, 5V |
| Frequency - Transition | 1.025GHz ~ 1.15GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 55AW |
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