2N5179
RF TRANS NPN 12V 200MHZ TO72Manufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
Quality Control: Learn More
Microsemi Corporation's 2N5179 is an NPN bipolar RF transistor designed for high-frequency applications. This component features a collector-emitter breakdown voltage of 12V and a maximum collector current of 50mA. With a transition frequency of 200MHz and a typical gain of 20dB at 200MHz, it offers robust performance. The noise figure is rated at 4.5dB typically at 200MHz, making it suitable for sensitive RF circuits. The device operates at a maximum power dissipation of 300mW and utilizes a TO-72 (TO-206AF) metal can package, ideal for through-hole mounting. The minimum DC current gain (hFE) is 25 at 3mA and 1V. This transistor is commonly employed in telecommunications, radio frequency amplification, and general-purpose RF circuitry.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-206AF, TO-72-4 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | - |
| Gain | 20dB |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 3mA, 1V |
| Frequency - Transition | 200MHz |
| Noise Figure (dB Typ @ f) | 4.5dB @ 200MHz |
| Supplier Device Package | TO-72 |
Request a Quote
Clients Also Buy
MSC1175M
RF TRANS NPN 65V 1.15GHZ M218
UTV005
RF TRANS NPN 24V 860MHZ 55FT
1014-6A
RF TRANS NPN 50V 1.4GHZ 55LV
