2N5109
RF TRANS NPN 20V 1.2GHZ TO39Manufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation's 2N5109 is a high-performance NPN bipolar RF transistor designed for demanding applications. This through-hole component, housed in a TO-39 (TO-205AD) metal can package, offers a 20V collector-emitter breakdown voltage and a maximum collector current of 400mA. With a transition frequency of 1.2GHz and a power dissipation of 2.5W, the 2N5109 is suitable for RF amplification and switching circuits. Key specifications include a minimum DC current gain (hFE) of 40 at 50mA, 15V, and a typical gain of 12dB. This device is widely utilized in telecommunications, industrial control, and aerospace systems requiring robust RF performance.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | - |
| Gain | 12dB |
| Power - Max | 2.5W |
| Current - Collector (Ic) (Max) | 400mA |
| Voltage - Collector Emitter Breakdown (Max) | 20V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 50mA, 15V |
| Frequency - Transition | 1.2GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | TO-39 |
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