2N5031
RF TRANS NPN 10V 400MHZ TO72Manufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation's 2N5031 is an NPN bipolar RF transistor designed for high-frequency applications. This through-hole component, housed in a TO-72 package, offers a collector-emitter breakdown voltage of 10V and a maximum collector current of 20mA. With a transition frequency of 400MHz and a gain of 12dB at 400MHz, it is suitable for RF amplification stages. The device features a minimum DC current gain (hFE) of 25 at 1mA and 6V, and a maximum power dissipation of 200mW. Typical applications include RF signal amplification in telecommunications and electronic test equipment.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-206AF, TO-72-4 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | - |
| Gain | 12dB @ 400MHz |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 20mA |
| Voltage - Collector Emitter Breakdown (Max) | 10V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 1mA, 6V |
| Frequency - Transition | 400MHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | TO-72 |
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