2N2857UB
RF TRANS NPN 15V 0.04A UBManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation's 2N2857UB is an NPN bipolar RF transistor designed for high-frequency applications. This surface-mount component operates with a collector-emitter breakdown voltage of 15V and a maximum collector current of 40mA. It offers a typical gain of 21dB at 450MHz with a noise figure of 4.5dB at the same frequency. The device features a minimum DC current gain (hFE) of 30 at 3mA and 1V. With a maximum power dissipation of 200mW and an operating junction temperature range of -65°C to 200°C, the 2N2857UB is suitable for demanding RF circuits in aerospace, defense, and industrial communications. The UB package facilitates efficient integration into automated assembly processes.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Gain | 21dB |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 40mA |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 3mA, 1V |
| Frequency - Transition | - |
| Noise Figure (dB Typ @ f) | 4.5dB @ 450MHz |
| Supplier Device Package | UB |
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