2A5
RF TRANS NPN 22V 3.7GHZ 55ETManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation's 2A5 is an NPN bipolar RF transistor designed for high-frequency applications. This component operates within the 3.4GHz to 3.7GHz frequency range, offering a typical gain of 7dB to 9dB. With a maximum collector current of 3mA and a collector-emitter breakdown voltage of 22V, the 2A5 is suitable for demanding RF power amplification in telecommunications and aerospace industries. It features a stud mount package (55ET) and can withstand operating temperatures up to 200°C (TJ), with a maximum power dissipation of 5.3W. The DC current gain (hFE) is a minimum of 20 at 100mA and 5V. This device is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 55ET |
| Mounting Type | Stud Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 7dB ~ 9dB |
| Power - Max | 5.3W |
| Current - Collector (Ic) (Max) | 3mA |
| Voltage - Collector Emitter Breakdown (Max) | 22V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 100mA, 5V |
| Frequency - Transition | 3.4GHz ~ 3.7GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 55ET |
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