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23A025

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23A025

RF TRANS NPN 22V 3.7GHZ 55BT

Manufacturer: Microsemi Corporation

Categories: Bipolar RF Transistors

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Microsemi Corporation's 23A025 is a high-performance NPN RF transistor designed for demanding applications. This component features a 22V collector-emitter breakdown voltage and a 3.7GHz transition frequency, enabling efficient operation in high-frequency environments. Delivering up to 9W of power with a 1.2A collector current, the 23A025 exhibits a typical DC current gain (hFE) of 20 at 420mA and 5V, and a gain range of 6dB to 6.3dB. Its robust chassis mount package, the 55BT, ensures reliable thermal management for sustained operation at temperatures up to 200°C (TJ). This device is suitable for use in various industries requiring advanced RF amplification and switching capabilities.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case55BT
Mounting TypeChassis Mount
Transistor TypeNPN
Operating Temperature200°C (TJ)
Gain6dB ~ 6.3dB
Power - Max9W
Current - Collector (Ic) (Max)1.2A
Voltage - Collector Emitter Breakdown (Max)22V
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 420mA, 5V
Frequency - Transition3.7GHz
Noise Figure (dB Typ @ f)-
Supplier Device Package55BT

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