23A008
RF TRANS NPN 22V 3.7GHZ 55BTManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation RF Transistor, NPN, 22V Collector-Emitter Breakdown, 400mA Collector Current. This NPN bipolar RF transistor operates at a transition frequency of 3.7GHz and delivers 5W of power. Featuring a gain of 8.5dB to 9.5dB and a minimum DC current gain (hFE) of 20 at 100mA and 5V, it is designed for chassis mount applications. The operating temperature range extends to 200°C (TJ). The 55BT package is supplied in bulk. This component is suitable for demanding RF applications across various industries requiring robust performance.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 55BT |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 8.5dB ~ 9.5dB |
| Power - Max | 5W |
| Current - Collector (Ic) (Max) | 400mA |
| Voltage - Collector Emitter Breakdown (Max) | 22V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 100mA, 5V |
| Frequency - Transition | 3.7GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 55BT |
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