23A005
RF TRANS NPN 22V 4.3GHZ 55BTManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation NPN RF Transistor, part number 23A005, is a high-performance component designed for demanding RF applications. This device operates with a collector-emitter breakdown voltage of 22V and a maximum collector current of 400mA. Featuring a transition frequency of 4.3GHz and a power dissipation of 3W, it delivers a typical gain of 8.5dB to 9.5dB. The transistor's robust construction is evident in its chassis mount type and the 55BT package. Its high operating temperature of 200°C (TJ) makes it suitable for use in challenging environments. This NPN RF transistor finds application in various industries requiring reliable high-frequency amplification, including telecommunications and aerospace.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 55BT |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 8.5dB ~ 9.5dB |
| Power - Max | 3W |
| Current - Collector (Ic) (Max) | 400mA |
| Voltage - Collector Emitter Breakdown (Max) | 22V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 100mA, 5V |
| Frequency - Transition | 4.3GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 55BT |
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