2307
RF TRANS NPN 42V 2.3GHZ 55BTManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation's 2307 is an NPN bipolar RF transistor designed for high-frequency applications. This component offers a collector-emitter breakdown voltage of 42V and a maximum collector current of 1A, making it suitable for power amplification stages. With a transition frequency of 2.3GHz and a power output of 20.5W, it delivers 8dB of gain. The 2307 is presented in a 55BT chassis mount package, ideal for thermal management in demanding environments. Its typical DC current gain (hFE) is 10 at 500mA and 5V. Operating at junction temperatures up to 200°C, this device finds utility in radar systems, wireless infrastructure, and high-power RF amplification.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 55BT |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 8dB |
| Power - Max | 20.5W |
| Current - Collector (Ic) (Max) | 1A |
| Voltage - Collector Emitter Breakdown (Max) | 42V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 500mA, 5V |
| Frequency - Transition | 2.3GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 55BT |
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