2304
RF TRANS NPN 45V 2.3GHZ 55BTManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation's 2304 is an NPN bipolar RF transistor designed for high-performance applications. This component features a 45V collector-emitter breakdown voltage and a transition frequency of 2.3GHz, enabling efficient operation at microwave frequencies. With a maximum collector current of 600mA and a power dissipation of 10.2W, it is well-suited for demanding RF power amplification tasks. The typical DC current gain (hFE) is 10 at 300mA and 5V. The 2304 offers a gain of 8dB and is housed in a 55BT package for chassis mounting, facilitating thermal management in demanding environments. This transistor is commonly utilized in base station infrastructure and point-to-point communication systems.
Additional Information
Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 55BT |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 8dB |
| Power - Max | 10.2W |
| Current - Collector (Ic) (Max) | 600mA |
| Voltage - Collector Emitter Breakdown (Max) | 45V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 300mA, 5V |
| Frequency - Transition | 2.3GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 55BT |