2301
RF TRANS NPN 45V 2.3GHZ 55BTManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
Quality Control: Learn More
Microsemi Corporation, an NPN RF Transistor, features a 45V collector-emitter breakdown voltage and a 2.3GHz transition frequency. This component is rated for 300mA collector current and dissipates up to 5.6W of power. It offers a typical gain of 8dB and a minimum DC current gain (hFE) of 10 at 100mA and 5V. Designed for chassis mounting, this transistor operates up to a junction temperature of 200°C. The 55BT package is supplied in Bulk. This device is commonly utilized in robust RF power amplification applications across various industrial sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 55BT |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 8dB |
| Power - Max | 5.6W |
| Current - Collector (Ic) (Max) | 300mA |
| Voltage - Collector Emitter Breakdown (Max) | 45V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 100mA, 5V |
| Frequency - Transition | 2.3GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 55BT |
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