2001
RF TRANS NPN 50V 2GHZ 55BTManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation's 2001 is an NPN RF transistor designed for high-frequency applications. Featuring a collector-emitter breakdown voltage of 50V and a maximum collector current of 250mA, this device operates efficiently up to 2GHz. With a power dissipation capability of 5W and a typical gain of 9.5dB, it is suitable for demanding RF power amplification stages. The transistor exhibits a minimum DC current gain (hFE) of 20 at 100mA and 5V. Its robust construction and chassis mount package (55BT) ensure reliable performance in demanding environments. This component finds application in various industries, including aerospace, defense, and telecommunications, where robust RF performance is critical.
Additional Information
Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 55BT |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | - |
| Gain | 9.5dB |
| Power - Max | 5W |
| Current - Collector (Ic) (Max) | 250mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 100mA, 5V |
| Frequency - Transition | 2GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 55BT |
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