1517-110M
RF TRANS NPN 70V 1.65GHZ 55AW-1Manufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation's 1517-110M is a high-power NPN RF transistor designed for demanding applications. Operating within a frequency range of 1.48GHz to 1.65GHz, this device boasts a 70V collector-emitter breakdown voltage and a maximum collector current of 9A. Delivering a typical power output of 350W, it features a minimum DC current gain of 20 at 1A and 5V. The 1517-110M utilizes a 55AW-1 chassis mount package, facilitating efficient thermal management. This transistor is a suitable component for use in radar systems, satellite communications, and other high-frequency power amplification applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 55AW-1 |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | - |
| Gain | 7.3dB ~ 8.6dB |
| Power - Max | 350W |
| Current - Collector (Ic) (Max) | 9A |
| Voltage - Collector Emitter Breakdown (Max) | 70V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 1A, 5V |
| Frequency - Transition | 1.48GHz ~ 1.65GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 55AW-1 |
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