1214-55
RF TRANS NPN 50V 1.4GHZ 55AWManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation's 1214-55 is a high-power NPN RF transistor designed for demanding applications. This component operates within the 1.2GHz to 1.4GHz frequency range, delivering up to 175W of power. It features a 50V collector-emitter breakdown voltage and a maximum collector current of 8A. With a minimum DC current gain (hFE) of 20 at 1A and 5V, and a typical gain of 7dB, it provides robust performance for RF power amplification. The 1214-55 is housed in a 55AW chassis mount package, allowing for efficient thermal management in high-temperature environments up to 200°C (TJ). This bipolar RF transistor is utilized in power generation, radar systems, and broadcast communications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 55AW |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 7dB |
| Power - Max | 175W |
| Current - Collector (Ic) (Max) | 8A |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 1A, 5V |
| Frequency - Transition | 1.2GHz ~ 1.4GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 55AW |
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