1214-370M
RF TRANS NPN 75V 1.4GHZ 55STManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation's 1214-370M is an NPN bipolar RF transistor designed for high-power applications. This component operates within a frequency range of 1.2GHz to 1.4GHz, offering a typical gain of 8.7dB to 9dB. It features a maximum collector current of 25A and a collector-emitter breakdown voltage of 75V. The device boasts a minimum DC current gain (hFE) of 10 at 5A, 5V. Engineered for robust performance, it delivers up to 600W of power. The 1214-370M is chassis mountable, utilizing the 55ST package for efficient thermal management, and is supplied in bulk packaging. This transistor is well-suited for demanding applications in sectors such as telecommunications and industrial RF power amplification.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 55ST |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 8.7dB ~ 9dB |
| Power - Max | 600W |
| Current - Collector (Ic) (Max) | 25A |
| Voltage - Collector Emitter Breakdown (Max) | 75V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 5A, 5V |
| Frequency - Transition | 1.2GHz ~ 1.4GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 55ST |
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