1214-300M
RF TRANS NPN 50V 1.4GHZ 55STManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation RF Transistor, NPN, 1214-300M. This 88W NPN bipolar RF transistor operates with a collector-emitter breakdown voltage of 50V and a collector current of up to 4A. It offers a transition frequency range of 1.2GHz to 1.4GHz with a minimum DC current gain of 20 at 500mA and 5V. The device features a typical gain of 7dB and is designed for chassis mounting. With a maximum junction temperature of 200°C, this component is suitable for demanding applications in the aerospace, defense, and industrial sectors. The 55ST package provides robust thermal performance for high-power RF applications.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 55ST |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 7dB |
| Power - Max | 88W |
| Current - Collector (Ic) (Max) | 4A |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 500mA, 5V |
| Frequency - Transition | 1.2GHz ~ 1.4GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 55ST |
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