1214-300
RF TRANS NPN 50V 1.4GHZ 55KTManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation's 1214-300 is an NPN bipolar RF transistor engineered for high-power applications. This component operates within the 1.2GHz to 1.4GHz frequency range, delivering a typical gain of 7dB. With a maximum collector current rating of 4A and a breakdown voltage of 50V, it is suitable for power output stages. The device exhibits a minimum DC current gain (hFE) of 20 at 500mA and 5V. Designed for robust performance, it features an 88W power dissipation capability and a high operating junction temperature of 200°C. The 1214-300 is presented in a 55KT package for chassis mounting, facilitating efficient thermal management. This transistor finds utility in demanding applications across various RF power amplification systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 55KT |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 7dB |
| Power - Max | 88W |
| Current - Collector (Ic) (Max) | 4A |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 500mA, 5V |
| Frequency - Transition | 1.2GHz ~ 1.4GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 55KT |
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