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1214-30

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1214-30

RF TRANS NPN 50V 1.4GHZ 55AW

Manufacturer: Microsemi Corporation

Categories: Bipolar RF Transistors

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Microsemi Corporation 1214-30 is an NPN RF transistor designed for high-power applications. This component operates within a frequency range of 1.2GHz to 1.4GHz, featuring a maximum collector current of 4A and a breakdown voltage of 50V. With a maximum power dissipation of 88W and a DC current gain (hFE) of 20 at 500mA and 5V, it delivers a typical gain of 7dB. The 1214-30 is housed in a 55AW chassis mount package, facilitating efficient thermal management with an operating junction temperature of 200°C. This device is suitable for use in demanding RF power amplification circuits across various industrial and communication sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case55AW
Mounting TypeChassis Mount
Transistor TypeNPN
Operating Temperature200°C (TJ)
Gain7dB
Power - Max88W
Current - Collector (Ic) (Max)4A
Voltage - Collector Emitter Breakdown (Max)50V
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 500mA, 5V
Frequency - Transition1.2GHz ~ 1.4GHz
Noise Figure (dB Typ @ f)-
Supplier Device Package55AW

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