1214-150L
RF TRANS NPN 65V 1.4GHZ 55ST-1Manufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
Quality Control: Learn More
Microsemi Corporation's 1214-150L is a high-power NPN RF transistor designed for demanding applications. This component offers a 65V collector-emitter breakdown voltage and a maximum collector current of 15A. Operating within a frequency range of 1.2GHz to 1.4GHz, it provides a typical gain of 7.15dB to 8.7dB. The 1214-150L is rated for 320W of power dissipation and features a robust 55ST-1 chassis mount package, ensuring reliable thermal management. Its minimum DC current gain (hFE) is 20 at 1A and 5V. This transistor is suitable for use in high-power RF amplifier circuits across various industrial and telecommunications sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 55ST-1 |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 7.15dB ~ 8.7dB |
| Power - Max | 320W |
| Current - Collector (Ic) (Max) | 15A |
| Voltage - Collector Emitter Breakdown (Max) | 65V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 1A, 5V |
| Frequency - Transition | 1.2GHz ~ 1.4GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 55ST-1 |