1214-110M
RF TRANS NPN 75V 1.4GHZ 55KTManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation's 1214-110M is an NPN bipolar RF transistor designed for high-power applications. This component operates within a frequency range of 1.2GHz to 1.4GHz, delivering a typical gain of 7.4dB. With a maximum collector current of 8A and a breakdown voltage of 75V, it is rated for a maximum power output of 270W. The 1214-110M features a robust chassis mount package (55KT) suitable for demanding thermal environments, with an operating junction temperature up to 200°C. This device is a key component in applications such as radar systems, base stations, and other high-frequency power amplification stages across various industrial and defense sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 55KT |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 7.4dB |
| Power - Max | 270W |
| Current - Collector (Ic) (Max) | 8A |
| Voltage - Collector Emitter Breakdown (Max) | 75V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | 1.2GHz ~ 1.4GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 55KT |