10A060
RF TRANS NPN 24V 1GHZ 55FTManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
Quality Control: Learn More
Microsemi Corporation's 10A060 is an NPN bipolar RF transistor designed for high-frequency applications. This stud-mount device features a collector-emitter breakdown voltage of 24V and a maximum collector current of 3A. With a transition frequency of 1GHz and a power dissipation of 21W, it offers a power gain of 8dB to 8.5dB. The transistor exhibits a minimum DC current gain (hFE) of 20 at 400mA and 5V. Operating at junction temperatures up to 200°C, the 10A060 is suitable for demanding applications within the aerospace, defense, and telecommunications industries. It is supplied in a 55FT package.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 55FT |
| Mounting Type | Stud Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 8dB ~ 8.5dB |
| Power - Max | 21W |
| Current - Collector (Ic) (Max) | 3A |
| Voltage - Collector Emitter Breakdown (Max) | 24V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 400mA, 5V |
| Frequency - Transition | 1GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 55FT |
Request a Quote
Clients Also Buy
MSC1175M
RF TRANS NPN 65V 1.15GHZ M218
UTV005
RF TRANS NPN 24V 860MHZ 55FT
1014-6A
RF TRANS NPN 50V 1.4GHZ 55LV
