10A030
RF TRANS NPN 24V 2.5GHZ 55FTManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation's 10A030 is a high-performance NPN bipolar RF transistor. This component is engineered for demanding radio frequency applications, offering a 24V collector-emitter breakdown voltage and a 1.5A maximum collector current. With a transition frequency of 2.5GHz, it delivers robust performance across a wide frequency spectrum. The 10A030 features a typical gain range of 7.8dB to 8.5dB and a minimum DC current gain (hFE) of 20 at 200mA and 5V. Its stud mount package (55FT) facilitates efficient thermal management, crucial for operation at its maximum power dissipation of 13W and an operating junction temperature of up to 200°C. This transistor is commonly utilized in telecommunications infrastructure, radar systems, and high-frequency power amplification stages.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 55FT |
| Mounting Type | Stud Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 7.8dB ~ 8.5dB |
| Power - Max | 13W |
| Current - Collector (Ic) (Max) | 1.5A |
| Voltage - Collector Emitter Breakdown (Max) | 24V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 200mA, 5V |
| Frequency - Transition | 2.5GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 55FT |
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