10A015
RF TRANS NPN 24V 2.7GHZ 55FTManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation NPN RF Transistor, part number 10A015. This stud-mount device operates at a frequency transition of 2.7GHz with a maximum collector current of 750mA. It offers a power dissipation capability of 6W and a collector-emitter breakdown voltage of 24V. The DC current gain (hFE) is a minimum of 20 at 100mA and 5V, with a typical gain of 9dB to 9.5dB. The transistor is designed for high-temperature operation, with an operating junction temperature of 200°C. The component is packaged in a 55FT stud mount configuration. This RF transistor is suitable for applications in the aerospace, defense, and industrial sectors requiring high-frequency power amplification.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 55FT |
| Mounting Type | Stud Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 9dB ~ 9.5dB |
| Power - Max | 6W |
| Current - Collector (Ic) (Max) | 750mA |
| Voltage - Collector Emitter Breakdown (Max) | 24V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 100mA, 5V |
| Frequency - Transition | 2.7GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 55FT |
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