10502
RF TRANS NPN 65V 55SMManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation RF Transistor NPN, part number 10502, is a high-power NPN bipolar RF transistor designed for demanding applications. This chassis mount component delivers up to 1458W of power with a collector current capability of 40A and a collector-emitter breakdown voltage of 65V. It exhibits a minimum DC current gain (hFE) of 20 at 5A and 5V, and a typical gain of 8.5dB. The operating junction temperature reaches up to 230°C, making it suitable for robust thermal environments. The 55SM package ensures efficient thermal management. This device finds utility in various high-frequency power amplification and switching applications across industries such as telecommunications, industrial, and defense.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 55SM |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 230°C (TJ) |
| Gain | 8.5dB |
| Power - Max | 1458W |
| Current - Collector (Ic) (Max) | 40A |
| Voltage - Collector Emitter Breakdown (Max) | 65V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 5A, 5V |
| Frequency - Transition | - |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 55SM |
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