1035MP
RF TRANS NPN 65V 1.15GHZ 55FW-1Manufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation's 1035MP is an NPN RF power transistor designed for high-frequency applications. This chassis-mount component operates within the 1.025 to 1.15 GHz range, offering a power output of 125W. Key specifications include a collector current of up to 2.5A and a collector-emitter breakdown voltage of 65V. The device exhibits a minimum DC current gain (hFE) of 20 at 100mA and 5V, with a typical gain of 10dB to 10.5dB. Operating at junction temperatures up to 200°C, the 1035MP is suitable for demanding environments. The 55FW-1 package facilitates thermal management. This transistor is commonly utilized in radar, communication systems, and other high-power RF amplification circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 55FW-1 |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 10dB ~ 10.5dB |
| Power - Max | 125W |
| Current - Collector (Ic) (Max) | 2.5A |
| Voltage - Collector Emitter Breakdown (Max) | 65V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 100mA, 5V |
| Frequency - Transition | 1.025GHz ~ 1.15GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 55FW-1 |
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