1014-6A
RF TRANS NPN 50V 1.4GHZ 55LVManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation's 1014-6A is an NPN bipolar RF transistor designed for high-frequency applications operating between 1GHz and 1.4GHz. This chassis-mount component offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 1A. With a power dissipation capability of 19W and a typical gain of 7dB to 7.5dB, the 1014-6A is suitable for demanding RF power amplification tasks. Its high junction temperature rating of 200°C ensures reliable operation in challenging thermal environments. This device is commonly utilized in industrial, defense, and telecommunications sectors demanding robust RF performance. The 55LV package facilitates efficient heat dissipation for sustained operation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 55LV |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 7dB ~ 7.5dB |
| Power - Max | 19W |
| Current - Collector (Ic) (Max) | 1A |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | 1GHz ~ 1.4GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 55LV |
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