1014-12
RF TRANS NPN 50V 1.4GHZ 55LTManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation's 1014-12 is an NPN bipolar RF transistor designed for high-power applications. This component operates within a frequency range of 1GHz to 1.4GHz, offering a minimum transition frequency of 1GHz and a typical gain of 6.8dB. It supports a collector current of up to 5A and a breakdown voltage of 50V. The device is rated for a maximum power dissipation of 39W and features a chassis mount for robust thermal management, operating at junction temperatures up to 200°C. The 55LT package facilitates efficient heat sinking. This transistor is commonly utilized in demanding RF power amplification circuits within the aerospace, defense, and industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 55LT |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 6.8dB |
| Power - Max | 39W |
| Current - Collector (Ic) (Max) | 5A |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 200mA, 5V |
| Frequency - Transition | 1GHz ~ 1.4GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 55LT |
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