0912-7
RF TRANS NPN 60V 1.215GHZ 55CXManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation's 0912-7 is a high-power NPN bipolar RF transistor. Designed for demanding applications, this component operates within a frequency range of 960MHz to 1.215GHz, delivering a maximum output power of 50W. It features a collector current capability of 1A and a collector-emitter breakdown voltage of 60V. The DC current gain (hFE) is a minimum of 10 at 100mA and 5V, with a typical gain of 8.5dB. Its robust design includes a chassis mount for efficient thermal management, allowing it to operate at junction temperatures up to 200°C. The 55CX package ensures reliable performance in harsh environments. This transistor is commonly utilized in power amplification stages for wireless communication systems, including base stations and radar applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 55CX |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 8.5dB |
| Power - Max | 50W |
| Current - Collector (Ic) (Max) | 1A |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 100mA, 5V |
| Frequency - Transition | 960MHz ~ 1.215GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 55CX |
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