0912-25
RF TRANS NPN 55V 1.215GHZ 55CTManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation 0912-25 is an NPN RF bipolar transistor designed for high-power applications. This component operates within a frequency range of 960MHz to 1.215GHz, offering a typical power output of 125W. Key specifications include a collector current (Ic) of 2.5A and a collector-emitter breakdown voltage (Vce) of 55V. The DC current gain (hFE) is a minimum of 10 at 300mA and 5V, with a typical gain of 8.5dB to 10dB. Designed for chassis mounting, the 0912-25 is suitable for demanding environments with an operating junction temperature of up to 200°C. This transistor is commonly utilized in broadcast transmitters and radar systems. The package style is 55CT.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 55CT |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 8.5dB ~ 10dB |
| Power - Max | 125W |
| Current - Collector (Ic) (Max) | 2.5A |
| Voltage - Collector Emitter Breakdown (Max) | 55V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 300mA, 5V |
| Frequency - Transition | 960MHz ~ 1.215GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 55CT |
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