0910-60M
RF TRANS NPN 65V 1GHZ 55AWManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation's 0910-60M is an NPN bipolar RF transistor designed for high-power applications. This chassis-mount component operates within the 890MHz to 1GHz frequency range, delivering a typical power output of 180W. It features a collector-emitter breakdown voltage of 65V and can handle a continuous collector current of 8A. The 0910-60M is specified for a junction temperature of up to 200°C and is supplied in the 55AW package. This device is suitable for demanding RF power amplification stages in telecommunications infrastructure, broadcast equipment, and industrial RF heating systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 55AW |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 8dB ~ 8.5dB |
| Power - Max | 180W |
| Current - Collector (Ic) (Max) | 8A |
| Voltage - Collector Emitter Breakdown (Max) | 65V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | 890MHz ~ 1GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 55AW |
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