0510-50A
RF TRANS 27V 1GHZ 55AVManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation 0510-50A is a high-power RF bipolar transistor designed for demanding applications. This component operates within a frequency range of 500MHz to 1GHz, delivering up to 50W of output power. It features a collector-emitter breakdown voltage of 27V and a maximum collector current of 3.7A. The device exhibits a minimum DC current gain of 10 at 500mA and 5V, with a typical gain of 7dB. Engineered for robust performance, it is rated for an operating junction temperature of 200°C. Its chassis mount configuration and 55AV package facilitate efficient thermal management. This transistor is commonly utilized in industrial, defense, and aerospace sectors for high-frequency power amplification and switching.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 55AV |
| Mounting Type | Chassis Mount |
| Transistor Type | - |
| Operating Temperature | 200°C (TJ) |
| Gain | 7dB |
| Power - Max | 50W |
| Current - Collector (Ic) (Max) | 3.7A |
| Voltage - Collector Emitter Breakdown (Max) | 27V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 500mA, 5V |
| Frequency - Transition | 500MHz ~ 1GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 55AV |
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